1/6 preliminary data december 2002 STS6PF30L p-channel 30v - 0.025 w -6aso-8 stripfet? ii power mosfet note: for the p-channel mosfet actual polarity of voltages and current has to be reversed n typical r ds (on) = 0.025 w n standard outline for easy automated surface mount assembly n low threshold drive description this power mosfet is the latest development of st- microelectronics unique single feature size ? strip-based process. the resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man- ufacturing reproducibility. applications n mobile phone applications n dc-dc converters n battery management in nomadic equipment absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STS6PF30L 30 v < 0.030 w 6a symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 6a i d drain current (continuous) at t c = 100c 4a i dm ( ) drain current (pulsed) 24 a p tot total dissipation at t c = 25c 2.5 w so-8 internal schematic diagram
STS6PF30L 2/6 thermal data (#) when mounted on 1 inch 2 fr4 board, 2 oz of cu and t 10s electrical characteristics (t j = 25 c unless otherrwise specified) off on (1) dynamic rthj-amb(#) thermal resistance junction-ambient max 50 c/w tj maximum lead temperature for soldering purpose typ 150 c t stg storage temperature C55 to 150 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 1 1.6 2.5 v r ds(on) static drain-source on resistance v gs =10v,i d =3a 0.025 0.030 w v gs = 4.5v, i d =3a 0.032 0.040 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =10v,i d =3a 11 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1670 pf c oss output capacitance 345 pf c rss reverse transfer capacitance 120 pf
3/6 STS6PF30L electrical characteristics (continued) switching on(2) switching off(2) source drain diode (2) note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =24v,i d =6a r g = 4.7 w v gs =4.5v (resistive load, figure 3) 62 ns t r rise time 48 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v,i d =6a, v gs = 4.5v 18.5 3.9 8.6 25 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =24 v, i d =6a, r g =4.7 w, v gs = 4.5 v (resistive load, figure 3) 57 19 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 6 a i sdm (1) source-drain current (pulsed) 24 a v sd (2) forward on voltage i sd = 6 a, v gs =0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6a, di/dt = 100a/s, v dd =24v,t j = 150c (see test circuit, figure 5) 37 46 2.5 ns nc a
STS6PF30L 4/6 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/6 STS6PF30L dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data
STS6PF30L 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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